Gallium arsenide-based long-wavelength quantum dot lasers.

摘要

GaAs-based long-wavelength quantum dot lasers have long been studied for applications to optical interconnects. The zero-dimensional confinement potential of quantum dots opens possibility of novel devices. Also, the quantum dot itself shows very interesting characteristics.; This dissertation describes the development of GaAs-based 1.3 μm quantum dot lasers and the research on the unique characteristics of quantum dot ensemble.; InGaAs quantum dots grown using molecular beam epitaxy in submonolayer deposition have extended wavelength around 1.3 μm and well resolved energy levels that can be described by three-dimensional harmonic oscillator model assuming parabolic confining potential. Lasing transitions from various InGaAs quantum dot energy levels are obtained from edge-emitting lasers. With optimized quantum dot active region and device structure, continuous-wave, room-temperature lasing operation around 1.3 μm is achieved with very low threshold current. Lateral confinement of carriers and photons in the cavity with Al_xO _y using wet-oxidation technique results in low waveguide loss, which lowers the threshold further.; InGaAs quantum dot lasers have almost temperature-insensitive lasing threshold below ∼200 K with very low threshold current density close to transparency current density. The rapid increase of threshold current along with temperature above ∼200 K is due to thermal excitation of carriers into the higher energy levels and increase of non-radiative recombination. Quasi-equilibrium model for carrier dynamics shows that the optical gain of quantum dot ensemble is strongly temperature dependent, and that the separation between quantum dot energy levels plays an important role in the temperature dependence of the device characteristics. Several predictions of the model are compared with the experimental results. Lasing operation with less temperature-sensitivity is achieved from InAs quantum dot lasers with increased level separation.