A photoconductive switch arrayed antenna with a chemical vapor deposited (CVD) diamond film was designed and developed for generating high-power teraherte (THZ). In CVD diamond, an electric field stress of 2×10{sup}5V/cm can be applied to the gaps because of the high breakdown threshold properties and the gap Structure for preventing surface flashover. This level of field stress can alleviate the present problem of saturation in THz emission using a photoconductive antenna. In demonstration experiment using an ultrashort pulse Kr*F laser, an energy density of 10μJ/cm{sup}2 on the emitter surface was obtained at E=10{sup}5 V/cm. This density was larger than that of the present large aperture antenna. The 2-inch's aperture device, which was consisted of more than two thousand 20μm×2.8mm emitter arrays, were developed. There was no severe saturation in photoconductive current up to E=10{sup}6 V/cm, and a focused intensity of 200 MW/cm{sup}2 can be expected.
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机译：设计并开发了具有化学气相沉积的光电导电开关阵列天线（CVD）金刚石薄膜，用于产生高功率太赫特（THz）。在CVD金刚石中，由于高击穿阈值特性和用于防止表面闪光装置的间隙结构，可以将2×10 {SUP} 5V / cm的电场应力施加到间隙。这种级别的场压可以使用光电导天线缓解THz发射中的饱和度的目前问题。在使用超短脉冲KR * F激光器的示范实验中，在E = 10 {SUP} 5V / cm处获得发射极表面上的10μJ/ cm {sup} 2的能量密度。这种密度大于目前大孔径天线的密度。开发了2英寸的孔径装置，由超过2万20μm×2.8mm发射器阵列组成。在光电导电流中没有严重的饱和度，直到e = 10 {sup} 6 v / cm，可以预期聚焦强度为200 mw / cm {sup} 2。
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