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MEMS-based precision motion control approach to high-throughput-rate electron beam lithography

机译:基于MEMS的高吞吐率电子束光刻精密运动控制方法

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The ever-increasing drive to fabricate Integrated Circuits (IC's) with smaller feature sizes is stretching the capabilities of today's optical lithography methods. Current techniques are becoming less scalable, with incremental improvements in resolution requiring ever increasing research and investment. New technologies are appearing, enabling conventional, optical microfabrication techniques to be replaced with simpler, scalable methods, revolutionizing IC fabrication. An alternative approach to sub-50nm lithography is presented utilizing the features of smart materials and Micro-Electro-Mechanical Systems (MEMS) technology. MEMS fabricated arrays of electron beam emitters offer the resolution and scalability of Multi-column Electron Beam Lithography (MEBL), while overcoming traditional limitations in production rate, optical complexity and beam current. Critical tradeoffs between significant variables are developed that show the feasibility of the proposed reference design. The proposed method consists of a highly parallel, multi-column EBL system with a production rate from 10-60 wafers/hr at 50nm resolution, and is shown to be feasible with near-term evolution in specific technologies. This solution exploits converging technologies in smart materials, MEMS and precision motion control, to overcome the limitations faced by current EBL approaches.
机译:越来越多的推动具有较小特征尺寸的集成电路(IC的)正在拉伸当今光学光刻方法的能力。目前的技术变得越来越缺乏可扩展,具有较大的研究和投资需求的分辨率的增量改进。新技术出现,实现常规的光学微型制备技术,以更简单,可伸缩的方法,旋转IC制造。利用智能材料和微机电系统(MEMS)技术的特征,提出了副50nm光刻的替代方法。 MEMS制造的电子束发射阵列提供多柱电子束光刻(MEBL)的分辨率和可扩展性,同时克服了生产率,光学复杂度和光束电流的传统局限。显着变量之间的关键权衡是开发的,显示了所提出的参考设计的可行性。该方法包括一个高度平行的多柱EBL系统,其生产率为10-60晶片/小时,分辨率为50nm,并且被证明是可行的特定技术中的近期演进。该解决方案利用智能材料,MEMS和精密运动控制中的融合技术,克服当前EBL方法所面临的限制。

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