Quality improved MOCVD GaAs epitaxial layers on Si substrate for photonics applications

摘要

GaAs epitaxial layers were grown using MOCVD on (100) oriented Si substrates 2° off towards [011] direction. Growth runs were performed using 2 different temperature cycles such as 300 °C - 950 °C (G1) and 300 °C - 950 °C + 750 °C -RT - 750 °C (G2). Grown samples were characterized using X-ray diffractometer (DXRD), time resolved photoluminescence (TRPL), Atomic Force Microscopy (AFM) and photoluminescence (PL). The XRD results show that the G2 growth conditions results in the FWHM of 150 arc-sec. TRPL studies were also show longer minority carrier lifetime of 0.168 ns for G2 grown samples. Improved morphology was observed by AFM. The results were indicating that the G2 growth condition is able to improve the crystalline quality and surface morphology than the G1 growth condition. The substrates were also used further to grow In_(0.30)Ga_(0.70)As quantum dots.