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Activation methods for electroless copper deposition of seeding layer for ULSI copper interconnect metallization

机译:ULSI铜互连金属化播种层无电铜沉积的活性方法

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摘要

Electroless copper(EL-Cu) deposition is used as alternative method for seed layer formation in Cu multilevel metallization. This paper describes the study of various activation methods for EL-Cu deposition. The activation methods include the Cu flash layer deposited by PVD technology, Cu nuclei formed by contact displacement from wet solution, Pd layer deposited by PVD technology and Pd nuclei precipitated from wet solution with Pd ions. The microstructure of the EL-Cu is dependent on the activation method. EL-Cu seed layer with excellent step coverage and high (111) texture was obtained if deposited on PVD Cu flash layer. EL-Cu seed layers deposited on nuclei formed by contact displacement and Pd layer deposited by PVD technology were found to have very poor adhesion to the underlying barrier layer. EL Cu seed layer with good adhesion and conformal step coverage was achieved with Pd nuclei precipitated from wet solution with Pd ions.
机译:化学镀铜(EL-Cu)沉积用作Cu多级金属化中种子层形成的替代方法。本文介绍了EL-Cu沉积的各种活化方法的研究。激活方法包括通过PVD技术沉积的Cu闪蒸层,通过从湿溶液的接触位移形成的Cu核,PVD技术沉积的PD层和从湿溶液用Pd离子沉淀出来的PD核。 EL-Cu的微观结构取决于活化法。如果沉积在PVD Cu闪光层上,则获得具有优异步进覆盖和高(111)纹理的EL-Cu种子层。发现沉积在通过PVD技术沉积的接触位移和PD层形成的核上沉积的EL-Cu种子层对下面的阻挡层具有非常差的粘附性。通过用Pd离子从湿溶液中沉淀的Pd核来实现具有良好粘附性和保形步进覆盖的EL Cu种子层。

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