Modeling Fluctuations in the Threshold Voltage and ON-Current and Threshold Voltage Fluctuation due to Random Telegraph Noise

摘要

We investigate the influence of two traps in dose proximity within one nanometer located at the semiconductor/oxide Interface (positioned in the middle of the gate width and moved from the source end to the drain end of the channel) on the threshold voltage and the ON-current variation. We find that when one of the traps is located at the source end of the channel, the threshold voltage and the magnitude of the drain current are dominated by the potential barrier created by the negatively charged trap. When the trap is positioned at the drain-end of the channel, the barrier effect is smaller and screening (for small drain bias) and the absence of screening (at large drain bias due to the presence of the pinch-off region) determine whether current will be degraded or not.