Neutron-induced boron fission as a major source of soft errors in deep submicron SRAM devices

摘要

The impact of cosmic neutron induced /sup 10/B fission in production logic devices is reported for the first time. Using a special 20 K cold neutron beam to accelerate SER events, we unambiguously demonstrate that neutron induced /sup 10/B fission is a significant source of soft errors in deep-submicron SRAMs fabricated with borophosphosilicate glass (BPSG).