Analysis of evolution to and beyond quasi-breakdown in ultra-thin oxide and oxynitride

摘要

Evolution to quasi-breakdown with constant current stressing, annealing behavior and response to further post-quasi-breakdown stressing are observed in 30 /spl Aring/ (measured by ellipsometry) furnace grown oxide and oxynitride samples. The innate behavior of the dielectrics is clearly demonstrated in the wear-out/failure stage with these measurements and anneals. Devices tested are NMOS transistors with channel width of 15 /spl mu/m and lengths ranging from 15 to 0.225 /spl mu/m.