Statistical Hot-Carrier Reliability Simulation using a Novel SPICE Parameter Evolution Model

摘要

One of the key components in any circuit reliability simulation methodology is a strategy for predicting the hot-carrier-induced changes in device parameters during stress. In the context of SPICE MOS-FET model parameter shifts, the parameter extraction methodology utilised contributes to the "ease" in which parameter degradation trends can be modelled. This paper will demonstrate that direct parameter extraction techniques produce more monotonic parameter degradation trends than conventional optimisation techniques. In addition, a novel approach for the modelling of the evolution of directly-extracted parameters during hot-carrier stress is presented. Finally, a statistical validation, comparing measured and simulated degraded ring oscillator data, is presented.