Fabrication of Nano-Structure for Room Temperature Single Electron Devices

摘要

The single wall carbon nanotube atomic force microscopy (AFM) tip was introduced into the AFM nano-oxidation process, which oxidized the titanium (Ti) metal film on the atomically flat α-Al2O3 substrate and formed the ultra narrow oxidized titanium (TiOx) line of 5nm width. The single wall carbon nanotube was grown directly onto the Si AFM tip. This TiOx lines was used as the tunnel junctions of the single electron transistor (SET), and the SET fabricated by this process showed the room temperature Coulomb oscillation with the periods of 1V. This technique is also applicable to the silicon and compound semiconductors.