Development of GaN-based Gunn-Effect Millimeter-Wave Sources

摘要

Theoretical and experimental studies conducted for the purpose of development and optimization of GaN-based Gunn diodes for THz are reported. GaN Gunn-diode oscillators with 0.3μm-thick GaN diodes are expected to have fundamental frequency of 750GHz and power density of 3x10~5W/cm~2. GaN In an effort to verify the experimental characteristics of GaN Gunn diodes, device layers were grown by MOCVD and special device patterns have been developed. On-wafer characterization of the fabricated GaN negative differential resistance (NDR) diodes revealed increased power capability compared with GaAs Gunn devices The processing necessary for realization of such diodes with increased power handling is also addressed.