Peculiarities of Si films etching in CF{sub}4 parent gas

摘要

The peculiarities of heat-mass transfer in radial flow reactor are discussed. Flow structure, temperature of gas mixture and reactive species concentration distribution were studied as a functions of gas flow rate and wafer temperature. The simulations of reactor incorporated modeling of the hydrodynamical and molecular transport processes in the etching chamber. It were considered two-, three- and four- component chemical kinetics. The electron density distribution corresponded to a "diffusion-dominated" discharge. Analysis of calculation data it was shown that the significant radial gradients of gas temperature were appeared and reduced etching uniformity of the wafer. The distribution of reactive species concentration and etching rate depends on the choice of chemical kinetic model. To choose the kinetic model of plasma reactor it is necessary to carry out the comparison of calculation data with experimental results.