首页> 外文会议>International Congress on Applications of Lasers Electro-Optics >SELECTIVE FEMTOSECOND LASER STRUCTURING OF A PLATINUM/TANTALUM PENTOXIDE THIN FILM LAYER SYSTEM BY INDUCED LASER ABLATION INVESTIGATED WITH PUMP-PROBE MICROSCOPY
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SELECTIVE FEMTOSECOND LASER STRUCTURING OF A PLATINUM/TANTALUM PENTOXIDE THIN FILM LAYER SYSTEM BY INDUCED LASER ABLATION INVESTIGATED WITH PUMP-PROBE MICROSCOPY

机译:用泵探针显微镜研究诱导激光消融铂/钽五丁醇薄膜层系统的选择性飞秒激光结构

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A biocompatible sensor chip consists of a 200 nm conducting platinum layer between a glass substrate and a 200 nm tantalum pentoxide layer as insulator on top. The irradiation of the biochip from the Ta_2O_5 side with ultra-short laser pulses (660 fs) at a wavelength of 1053 nm leads to a selective ablation of the Ta_2O_5 layer from the platinum. The ablation threshold for the removal of the Ta_2O_5 layer is about 0.08 J/cm~2. Moreover, the Ta_2O_5 lifts-off in form of an intact disk at a fluence of 0.14 J/cm~2. For deeper understanding of the ablation mechanisms, a pump-probe microscopy setup was utilized to record a stop-motion movie of the lift-off process. The setup utilizes an optically combined with an electronically delayed probe pulse. For the first time to our knowledge the laser lift-off of a transparent oxide could be recorded over the complete temporal dynamic range. The movies reveal that an intact disk leaves the hole after a few 10 ns. At higher fluences of about 0.20 J/cm~2 the disk disrupts in several particles at about 40 ns.
机译:生物相容性传感器芯片由200nm在玻璃基板和200nm钽五氧化钽层之间的200nm导电层组成,作为顶部的绝缘体。从1053nm的波长的超短激光脉冲(660 fs)的基础芯片从Ta_2O_5侧照射导致来自铂的Ta_2O_5层的选择性消融。去除Ta_2O_5层的消融阈值约为0.08J / cm〜2。此外,TA_2O_5以0.14J / cm〜2的流量为完整圆盘的形式升降。为了更深入地理解消融机制,利用泵探针显微镜设置来记录剥离过程的止动影像。该设置利用光学组合与电子延迟探针脉冲。首次知道透明氧化物的激光剥离可以记录在完整的时间动态范围内。电影揭示了一个完整的磁盘在几十个月后离开了洞。在较高的流量下,约为0.20 j / cm〜2,磁盘在约40ns的几个颗粒中扰乱。

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