Raman spectroscopy has been used extensiverly to study semiconductors and the of Raman microprobes since 1974 has made it a ver eas and fast technique todetermine the structural prperties of semisconductor micro regins~(1). Thehig irradiance levels (typically 10~3 kW/cm~2) produced by the focused lasr beam at the sample could cuase smaple melting. phase changes or degradation/sublimation~(2). The aim of this study was to show the effect of the exciting laser (514.5 nm) on CdTe surfaces at different laser irradiation intensities.
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