CHEMICAL VAPOR DEPOSITION OF ALUMINUM ON SILICON CARBIDE FOR THE INVESTIGATION OF THE INTERFACIAL MICROSTRUCTURE IN DISCONTINUOUSLY REINFORCED ALUMINUM

摘要

This paper presents results on the chemical vapor deposition of aluminum on silicon carbide, starting from triisobutyl aluminum. The aim is to investigate new or modified processes to fabricate Discontinuously Reinforced Aluminum material with improved interfacial properties. Pretreatments of the deposition surface with hydrofluoric acid and/or titanium tetrachloride lead to films with a smoother morphology and stronger adhesion with the substrate than in the case of an untreated surface. Different heteroelements are observed at the interface under these conditions. A short thermal activation of the nucleation process following these pretreatments does not improve the characteristics of the aluminum films.