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NOVEL MOCVD PROCESS FOR THE LOW TEMPERATURE DEPOSITION OF THE CHROMIUM NITRIDE PHASES

机译:用于低温沉积氮化铬相的新型MOCVD工艺

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An MOCVD route for the low temperature deposition of each individual phase of the Cr-N system has been investigated. The chromium nitride coatings were deposited under low pressure on steel and silicon substrates at temperature as low as 723 K using bis(benzene)chromium as Cr source under NH_3 ambient and in presence of C_6Cl_6 vapor. The carbon contamination of the layers is very low and limited to a few atomic percent. The nature of the deposited phases depends on the NH_3:Cr(C_6H)6)_2 mole fraction ratio. Single-phase CrN and dual-phase CrN+Cr_2N coatings have been deposited by this triple-source process. Preliminary mechanical properties of the layers are reported and discussed in relation with their composition and microstructure.
机译:研究了CR-N系统的每个单独阶段的低温沉积的MOCVD途径。在NH_3环境下使用双(苯)铬在低至723k的温度下在低至723k的温度下沉积氮化铬涂层,在NH_3环境下,在C_6CL_6蒸汽存在下,在低至723k。层的碳污染非常低,限制为几个原子百分比。沉积相的性质取决于NH_3:Cr(C_6H)6)_2摩尔级分比。通过该三源过程沉积了单相CRN和双相CRN + CR_2N涂层。报告并讨论了层的初步力学性能,并讨论了它们的组成和微观结构。

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