A reaction-transport model for the Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN from trimethyl gallium (TMG) and ammonia diluted in a hydrogen carrier gas has been developed. The model has been verified against growth rate data from both a research-scale and an industrial-scale reactor (Thomas Swan 3x2"). Simulations of the MOVPE of GaN in rotating-disk and stagnation-flow reactors were used to elucidate the role of the underlying kinetics and transport phenomena in determining film deposition uniformity. Three-dimensional modeling of the industrial reactor was also used for showerhead design purposes, in this case to determine the effects of probe port windows and other showerhead obstructions on film thickness uniformity. Performance diagrams were developed to identify reactor geometries and operating conditions leading to minimal film thickness variations over large-area substrates.
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