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FACTORS AFFECTING THE AMOUNT OF CARBON IN TITANIUM CARBIDE FILMS MADE BY CVD

机译:影响CVD制造碳化钛膜中碳量的因素

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Crystalline titanium carbide films have been deposited by CVD from TiCl_4, CH_4, H_2, and Ar. Carbon atomic percent in the films was modeled using a 2~5 factorial design of five processing variables: reaction temperature, C.Ti input ratio, H:Ti input ratio, total reactor pressure, and total mass flow of reactants. All terms found to be significant in affecting the carbon in the film included the variable hydrogen. The 5-way interaction between all variables was also found to be significant. There is a transition region where the addition of hydrogen in the reaction works to reduce the amount of carbon in the film. When all variables are at their high values, increasing the amount of hydrogen decreases the amount of carbon in the film. At all variables at their low value, increasing the amount of hydrogen in the reaction increases the amount of carbon in the film.
机译:通过CVD从TiCl_4,CH_4,H_2和AR沉积结晶碳化钛膜。薄膜中的碳原子百分比使用五个加工变量的2〜5因子设计进行建模:反应温度,C.Ti输入比,H:Ti输入比,总反应器压力和反应物的总质量流动。在影响薄膜中的碳,发现所有术语都存在显着的术语包括可变氢气。所有变量之间的5档相互作用也被发现是显着的。存在过渡区域,其中在反应中加入氢气的作用以减少膜中的碳量。当所有变量处于高值时,增加氢气量会降低薄膜中的碳量。在其低值的所有变量下,增加反应中的氢气量增加了薄膜中的碳的量。

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