USE OF Ti(dpm)_2(OPr')_2 PRECURSOR TO OBTAIN TiO_2 FILM

摘要

The study of thermal behavior of Ti(dpm)_2(OPr')_2 used as a source compound to obtain TiO_2 films was carried out. Ti(dpm)_2(OPr')_2 has been obtained by original technique. Data on vapor composition, thermal stability and decomposition products of the compound in vacuo and oxygen presence were obtained. The scheme of thermal decomposition of vapor on hot surface is suggested. Photocatalytic TiO_2 films on glass and quartz plates were obtained by the chemical vapour deposition in a standard vacuum apparatus at 1.2-2.0xl0~(-4) mbar. The substrate temperature was stabilized at 540 - 550°C. The growth rate varied from several nano-metres to several tens nano-metres per minute.