A 10 #x03BC;m thick poly-SiGe gyroscope processed above 0.35 #x03BC;m CMOS

摘要

This paper describes a monolithically integrated ωz-gyroscope fabricated in a surface-micromaching technology. As functional structure, a 10 μm thick Silicon-Germanium layer is processed above a standard high voltage 0.35 μm CMOS-ASIC. Drive and Sense of the in plane double wing gyroscope is fully capacitively. Measurement of movement is also done fully capacitively in continuous-time baseband sensing. For characterization, the gyroscope chip is mounted on a breadboard with auxiliary circuits. A noise floor of 0.01 °/s/sqrt(Hz) for operation at 3 mBar is achieved.