PERFORMANCE RESULTS OF A NEW GENERATION OF 300 mm LITHOGRAPHY SYSTEMS

摘要

ASML's recently announced TWINSCAN~(TM) lithography platform is specifically designed to meet the specific needs of handling and processing 300 mm substrates. This new platform, already supporting a family of Step & Scan lithography systems for I-line and 248 nm DUV, is designed to further support optical lithography at its limits with systems for 193 nm and 157 nm. The conflicting requirements associated with higher productivity on one side, and more extensive metrology on the other, have led to the development of a platform with two independent wafer stages operating in parallel. The hardware associated with exposure, and the hardware and sub-systems required for metrology, are located in two separate positions. While a wafer is exposed on one stage, wafer unload/load and measurements of the horizontal and vertical wafer maps are done in parallel on the second stage. After the two processes are completed, where the exposure sequence typically is the longest, the two stages are swapped. The process is continued on the second stage, while the first stage unloads the exposed wafer and starts the process again. This system has an innovative design. It consists of a Metrology Frame that holds the projection lens and all measurement systems, and which is fully de-coupled from the force frame holding the stage actuators. To further suppress vibrations resulting from stage movements, a 'balance mass' principle is adopted. This principle uses an opposite movement of the balance mass to cancel out the acceleration forces caused by the high 300mm stage mass, and the speed and acceleration associated with high productivity. Long-term stability and alignment accuracy support the required stringent overlay performance. Dual wafer stage design requires careful characterization of the influence of stage-to-stage performance differences and calibration methods. Performance results of this new system indicate that dynamic performance of the stages is as expected and tracking errors for stage movement are negligible, demonstrating the benefits of balance masses. Crosstalk between the two independent wafer stages does not influence imaging and overlay performance. With two wafer stages, a wafer map can be generated prior to exposure. The wafer coordinates in the wafer plane are determined by means of the ATHENAT alignment system with two colors and seven diffraction orders. To control focus, the position of the wafer surface is measured with a new level sensor system that maps the entire wafer surface. The wafer coordinate system is aligned to the aerial image at the exposure position by a proprietary alignment method, based on the actinic exposure light under actual illumination and NA settings. The first system based on dual wafer stage technology on the TWINSCAN platform is the AT:750 Step & Scan system, which is equipped with a Zeiss Starlith~(TM) 750 248 nm DUV lens with a variable NA up to 0.7. When combined with the off-axis and multi-pole illumination capabilities of the AERIAL II illuminator, the system is capable of supporting leading edge imaging at the 130 nm node. Results presented in this paper demonstrate the system's capability to provide high throughput production processing of 300 mm wafers at the 130 nm node using a dual wafer stage system.