In this paper, we investigate the impact of nonquasi-static (NQS) effects on the small-signal RF behaviour of MOSFETs. We observed that the transistor power gain G/sub Tmax/ is largely overestimated in the quasi-static model, whereas it is accurately predicted using a second order NQS model. Furthermore, we investigated the impact of channel width scaling on the transistor y-parameters for the second order NQS model. Accurate modelling results are obtained for MOSFETs with small channel widths. However, experimental results indicate that the effective gate resistance, stemming from the distributed nature of the MOS gate, tends to be lower than R/sub gate/=WR/sub /spl square///(3L) at frequencies close to or larger than f=1/(R(/spl square/)C/sub ox/W/sup 2/). This was observed for transistors with a 25 /spl mu/m channel width.
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机译：在本文中，我们研究了非QuaSi-静态（NQS）对MOSFET的小信号RF行为的影响。我们观察到，晶体管功率增益G / Sub Tmax /在准静态模型中大幅度高估，而使用二阶NQS模型精确地预测。此外，我们调查了信道宽度缩放对二阶NQS模型的晶体管Y参数的影响。为具有小通道宽度的MOSFET获得精确的建模结果。然而，实验结果表明，从MOS栅极的分布性质源于MOS栅极的分布性质，倾向于在接近或更大的频率下倾向于低于R / SUB GATE / = WR / SEV / SEVE / SPR / SEC / SPR / SPR平方//////////////// /（3L）。比f = 1 /（r（/ spl方形/）c / sub ox / w / sup 2 /）。对于具有25 / SPL MU / M沟道宽度的晶体管，观察到这一点。
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