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Plasma Induced Wafer Surface Voltage and Its Electrochemical Corrosion in Tungsten Plug Process

机译:等离子体诱导晶圆表面电压及其在钨塞过程中的电化学腐蚀

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It has been reported that occasionally Tungsten plug core can be electrochemically corroded after metal etching and solvent stripping. The reason is possibly due to an electrical charging phenomenon. This has brought up concerns for misaligned contacts and vias. In this report we have investigated the effects of etching parameters on Tungsten plug loss. Plasma source power, gas flow ratio, pressure and bias power were varied in this experiment. The plasma potential and the plug loss level were measured. The results show similar trends between plasma potential and w plug loss.
机译:据报道,偶尔钨塞芯可以在金属蚀刻和溶剂汽提之后电化学腐蚀。原因可能是由于电荷现象。这使得对未对准的联系人和普通的担忧提出了担忧。在本报告中,我们研究了蚀刻参数对钨塞损失的影响。在该实验中变化了等离子体源功率,气体流量,压力和偏置功率。测量等离子体电位和插头损耗水平。结果表明了等离子体潜力与W插头损耗之间的类似趋势。

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