Preparation and properties of fluorinated amorphous carbon films by ECR-CVD method

摘要

Fluorinated amorphous carbon films (a-C:F) with a dielectric constant of 2.2 were prepared for intermetal dielectrics (IMD) for ULSI technology by ECR-CVD method. Current-voltage measurements of the a-C:F films demonstrate very good dielectric properties. FTIR absorption spectrum reveals that the a-C:F film is composed mainly of CF_n (n=1-3) structure. The deposition rate decreases with increasing the substrate temperature. This is attributed to the poor thermal stability of the a-C:F film according to TDS results.