METHOD FOR DEPOSITING A HIGHLY CONFORMAL AMORPHOUS CARBON FILM ON RAISED FEATURES CAPABLE OF IMPROVING A MATCHING PROPERTY OF A DEPOSITED AMORPHOUS CARBON FILM

摘要

PURPOSE: A method for depositing a highly conformal amorphous carbon film on raised features is provided to improve a film deposition rate on the side of a substrate by preventing a crack of an amorphous carbon film in the bottom of a sidewall of the substrate using process gas pressure over 1 Torr.;CONSTITUTION: A raised feature with a peak(105) and a sidewall(103) and a substrate with a field surface(107) are formed on a substrate holder in a process chamber. Process gas with hydrocarbon gas, oxygen containing gas, and argon or helium is inputted to the process chamber. Process gas pressure over 1 Torr is maintained in the process chamber. Plasma is generated from the process gas by using a microwave plasma source. A conformal amorphous carbon film(108) is deposited on the surface of the raised feature by exposing the substrate to the plasma.;COPYRIGHT KIPO 2013