Lateral band gap engineering by focused ion beam implantation for optolectronic devices

摘要

For the integration of optoelectronic components, like lasers, modulators, detectors or waveguides, materials with different band gaps are necessary, e.g., to avoid absorption in waveguides or to get optimal intensity contrast in modulators. By implantation induced thermal intermixing of semiconductor quantum films tructures the band gap can be selectively changed and the band gap shift can be controleld by the implantation parameters. Focused ion beam technology additionally allows maskless patterning, which simplifies epitaxial overgrowth and makes in-situ procesisng possible. The paper gives an over-view about highly spatially resolved quantum well intermixing by focused ion beam technology and how this technique can be applied for the dfinition of optoelectronic devices and components. By the high spatial resolution of the currently used focused ion beam sytems the definition of first order gratings for wavelengths from the infrared to the visible spectrum were achieved. New approaches for the fabrication of gain coupled distributed feedback lasers based on implanted first order gratings for 1.0 and 1.55 mum emission wavelength are discussed and device results will be presented.