A silicon based Separated-Absorption-Multiplication Avalanche Photo Diode (SAMAPD) is coated with Spin On Glass (SOG) as an antireflection layer. The curing temperature is only 200°C, for curing times ranging from 6 to 10 hours it is demonstrated that the refractive index and thickness of the SOG can be controlled. The SAMAPD with an AR layer shows an improvement in the photocurrent up to 20% at 0.85μm when compared with that without AR layer. A flat response in the range 0.8-0.9μm it is observed when the photocurrent of the AR coated SAMAPD is measured.
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