A silicon based Separated-Absorption-Multiplication Avalanche Photo Diode (SAMAPD) is coated with Spin On Glass (SOG) as an antireflection (AR) layer. The curing temperature is only 200/spl deg/C, for curing times ranging from 6 to 10 hours. It is demonstrated that the refractive index and thickness of the SOG can be controlled. The SAMAPD with an AR layer shows an improvement in the photocurrent up to 20% at 0.85 /spl mu/m when compared with that without AR layer. A flat response in the range 0.8-0.9 /spl mu/m is observed when the photocurrent of the AR coated SAMAPD is measured.
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