Molecular dynamics investigation of the silicides technology formation

摘要

Physical and chemical properties of ultrathin silicide films are of considerable interest because of their reduced coordination and symmetry lead to important changes in crystallographic and electronic structure with respect to the same material in the bulk. These silicides are characterized by a very low Schottky barrier to n-type Si combined with a small electrical resistivity and are therefore, attractive for Si based technology. Since interface with Si is buried by an overlayer and its structure depends on the materials and conditions during formation, it is difficult to clarify atomic structure of the interface. Hence, it is important to know the atom arrangement at the metal-silicon region in order to clarify the electronic structure of real interfaces.