Results are presented of a study on the boron dopant dose dependence of the mechanical stress in polycrystalline silicon (Poly-Si) films using Raman spectrometry. Depending on the dose of the boron implantation, a Raman shift from 0.2 to 3.0 cm~(-1) is observed, corresponding with a stress in the Poly-Si films between 50 to 750 MPa. It has also been observed that in these lowly doped Poly-Si films, there exists a maximum value of the mechanical stress with B-dose. The physical mechanism resulting in a lower stress for higher doping levels is unclear as yet.
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