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Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
Method of depositing charge trapping polycrystalline silicon films on silicon substrates with controllable film stress
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机译:在膜应力可控的硅衬底上沉积电荷俘获多晶硅膜的方法
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摘要
A semiconductor on insulator multilayer structure is provided. The multilayer comprises a high resistivity single crystal semiconductor handle substrate, a textured oxide, nitride, or oxynitride layer, a polycrystalline silicon layer, a dielectric layer, and a single crystal semiconductor device layer. The multilayer structure is prepared in a manner that reduces wafer bow.
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