Monolithic CMOS distributed amplifier and oscillator

摘要

CMOS implementations for RF applications often employ technology modifications to reduce the silicon substrate loss at high frequencies. The most common techniques include the use of a high-resistivity substrate (ρ>10Ω-cm) orsilicon-on-insulator (SOI) substrate and precise bondwire inductors [1, 2]. However, these techniques are incompatible with low-cost CMOS manufacture. This design demonstrates use of CMOS with a conventional low-resistivity epi-substrate and on-chipinductors for applications above 10GHz.