Monolithic integrated circuit oscillators, complementary metal oxide semiconductor (CMOS) voltage-controlled oscillators, integrated circuit oscillators, oscillator-forming methods, and oscillation methods are described. In one embodiment, a monolithic integrated circuit oscillator is provided and includes a semiconductive substrate. A field effect transistor is supported by the semiconductive substrate and an oscillator circuit is connected therewith. The oscillator circuit preferably comprises an inductor which is supported by the substrate and has an inductance value greater than or equal to about 4 nH. In another embodiment, a complementary metal oxide semiconductor (CMOS) voltage-controlled oscillator is provided and includes a metal oxide semiconductor field effect transistor (MOSFET) received by and supported over a silicon-containing substrate. The transistor has a gate, a source, and a drain. A first inductor is received within an insulative material layer supported by the substrate and is connected with the gate. A second inductor is received within the insulative material layer and is connected with the source. A capacitor is operably connected with the first inductor, wherein at least one of the inductors has an inductance value greater than or equal to about 4 nH. Other embodiments are described.
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