Analysis and Design of High Gain-Bandwidth CMOS Distributed Amplifier Utilizing a Cascaded Pseudo Differential Distributed Amplifier

摘要

Distributed amplioverlineers (DAs) are one of the most important and common wideband amplioverlineers that can use various arrangements in their gain cell structure. One of the gain cells that can be e (R) ective in increasing the bandwidth of a distributed amplioverlineer is the pseudo-di (R) erential amplioverlineer (PDA). Although pseudo-di (R) erential distributed amplioverlineers (PDDAs) have a wide bandwidth and amplify DC, they have a small voltage gain. In this paper, various circuits with the same power and chip area are proposed to improve the performance of PDDAs. For evaluating and comparing the performance of the proposed circuits, they are implemented in 0.18 mu m RF-CMOS technology. The simulation results reveal that two cascaded PDDAs with three stages have a better performance than three cascaded PDDAs with two stages; in two cascaded PDDAs with three stages, a gain of 9 dB can be achieved for a bandwidth of 50 GHz in 0.18 mu m RF-CMOS technology. In this amplioverlineer, parameters S11, S22 and S12 are - 12, -10 and - 18 dB, respectively; noise overlinegure is 4.3-5.8 dB, and P1dB is +4 dBm. This amplioverlineer consumes 220mW power and has a chip area of 0.58mm2.