Piezoelectric and excitonic effects on optical properties of pseudomorphically strained wurtzite GaN quantum well lasers

摘要

Interband transitons of pseudomorphic GaN/Al_xGa_1-x~N quantum wells are analized theoretically in detail with respect to the piezoelectric field utilizing full 6X6 Rashba-Sheka-Pikus (RSP) Hamiltonian.The modified band structure by the built-in Stark effect explains the presence of up to 400 meV shift of emission peaks in GaN/Al_0.15Ga_0.85N.Also,the behaviors of quantum well exciton binding energies are calculated by the variational method and are discussed in terms of spatial separation of electron and holes by the built-in electric field.