Photoelectric properties of ZnTe-CdSe and CdSe-ZnTe thin films heterojunctions

摘要

For the first time the heterojunctions (HJ) ZnTe-CdSe were grown by deposition of' ZnTe layer on the glass substrate by the discrete evaporation method and CdSe-layer - by the guasiclosed volume method. Also for the first time the HJ CdSe-ZnTe was grown by quasiclosed volume method. Results of investigation of the photoelectric proprieties of these heterojunctions are presented.