Pre-silicon parameter generation methodology using BSIM3 for device/circuit concurrent design

摘要

We present a physical parameter extraction methodology for BSIM3 to generate accurate pre-silicon parameters (parameters created before device fabrication). Using this method, the parameters of the 0.20μm process device can be generated from a0.25μm technology with 5% accuracy in a few minutes. We applied this method in optimizing the devices of our microprocessor in the early stages of design.