In this article we present a novel method of formation a multi-layer aluminum connection suitable for submicron IC technology. The method is a refinement of a hot planarising deposition of aluminium in which contacts and vias are fully filled with metal. In the proposed method we deposit first the desired metal layer of such a thickness that all openings are properly filled. in the next step the original metal layer is etch back to the thickness dictated by planarity requirements. Using the above method we developed a triple metal, double poly, CMOS process with a simple SOG planarisation process. The performance of this process is comparable to that of much more complex technology using a long range polymer planarisation.
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