Low threshold current 1.55 /spl mu/m lasers using novel selective oxidation of short period superlattice

摘要

InGaAsP-InP based injection laser diodes operating at 1.55 /spl mu/m are very attractive for optical communication systems. The most common Al containing material used in InP based system is Al/sub y/In/sub 1-y/As which is lattice matched to InP for y values near 0.48. Due to this low Al concentration, the oxidation rate for this material is very slow. As a result, the advantages of selectively oxidized structures can not be easily transferred to devices based on InP substrates. We propose using a short period InAs-AlAs superlattice layer as the buried oxidation layer. A short-period superlattice consisting of 2 monolayers of AlAs and 2 monolayers of InAs are grown right above the active region.