Progress with 100 mm diameter In{sub}.53Ga{sub}.47As/InP wafer processing

摘要

Photodetector array results for InGaAs/InP epitaxial layers grown on 50 and 75 mm diameter InP substrates are presented. Best shunt-resistance area products for lattice-matched material exceed 100,000 ohm-cm{sup}2. X-ray topography resultsindicate that low defect density (<10,000 cm{sup}-2) iron-doped InP substrates are available in 100 mm diameter. Low dark current results were also obtained with a a "spin-on" zinc diffusion technique whereby the source of zinc is "spun-on" much likephotoresist.