Evaporation vs. Sputtering of metal layers on the Backside of Silicon wafers

摘要

We present the results of the differences observed between evaporated and sputtered backside metallization processes on silicon wafers: These two methods of fabricating metal layers and the activation of the backside semiconductor-metal contact follow different physical mechanisms. Differing crystalline structures of the metal layers can be observed and the thermal budget of the overall process of the wafer is affected in different ways. In this paper we describe these differences, provide a description of the known physical and mechanical mechanisms and propose some models. Additionally we report a few production issues and experiences.