Method for transfer of silicon layer towards substrate support to form silicon on insulator wafer of backside illumination image forming device, involves making doped layer and layer of p-type silicon substrate to be porous

摘要

The method involves doping a surface region of a P-type silicon substrate (102) to form a doped layer (104). The doped layer and a layer (106) of the p-type silicon substrate underlying the doped layer are made porous. Monocrystalline silicon layer (108) is formed on the porous doped layer by epitaxial growth, and a substrate support (112) is fixed to the monocrystalline silicon layer. The monocrystalline silicon layer is separated from the silicon substrate within the porous layers, where the substrate has a doping level less than specific values. The doped layer and the porous doped layer possess porosities whose difference provides better quality to the monocrystalline silicon layer and separation of the monocrystalline silicon layer from the silicon substrate by thermal treatment without damaging the monocrystalline silicon layer. An independent claim is also included for a silicon structure.