Microscopic Studies of Radiation Damage-Induced Defects Responsible for the Deterioration of High-Resistivity Silicon Detectors

摘要

New levels are reported on fast neutron-damaged high-resistivity float zone silicon, and their contribution to the space charge in the field zone of a detector is discussed. Using TSC measurements, the hole capture at the C_iO_i donor level is shown to require a barrier of 35 meV to be overcome. Moreover, a bistable defect emerging during the annealing of heavily damaged samples is identified in the TSC spectrum.