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HIGH-RESISTIVITY SINGLE CRYSTAL ZINC OXIDE WAFER BASED RADIATION DETECTOR AND PREPARATION METHOD AND USE THEREOF
HIGH-RESISTIVITY SINGLE CRYSTAL ZINC OXIDE WAFER BASED RADIATION DETECTOR AND PREPARATION METHOD AND USE THEREOF
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机译:基于高电阻率的单晶氧化锌晶片的辐射探测器及其制备方法和用途
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摘要
The present invention discloses a high-resistivity single crystal zinc oxide (ZnO) wafer and a high-resistivity single crystal ZnO-based radiation detector, and preparation method and use thereof. The preparation method of the high-resistivity single crystal zinc oxide wafer is to place a single crystal ZnO wafer in a metal lithium electrochemical device for a constant-current discharge treatment, and then to place the single crystal ZnO wafer in a high-pressure oxygen atmosphere at 800 to 1000° C. and 10 to 30 atm for an annealing treatment for 20 to 28 hours. The preparation method of the radiation detector is to evaporate a metal electrode layer at both sides of the high-resistivity single crystal ZnO wafer, then to bond the wafer onto a circuit board, and to connect the wafer with the circuit board by a gold thread.
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