Visible light emitting device with schottky contact on ultra-thin amorphous silicon layer containing silicon nanocrystals

摘要

We have fabricated light emitting diodes (LEDs) with Schottky contacts on a single ultra-hin amorphous silicon (Si) layer containing Si naocrystals formed gy simple techniques as used for standard Si devices. Orange or red electroluminescence (EL) from these LEDs culd be seen with the naked eye at room temperature when a reverse bias voltage was applied. The operation voltage is reduced to 3.5-5 V, which is low enough to be applied by a standard Si transistor. The origin of luminescence is also discussed.