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Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device
Silicon nitride layer for light emitting device, light emitting device using the same, and method of forming silicon nitride layer for light emitting device
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机译:用于发光器件的氮化硅层,使用该氮化硅层的发光器件以及形成用于发光器件的氮化硅层的方法
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摘要
Provided are a silicon nitride layer for a light emitting device, light emitting device using the same, and method of forming the silicon nitride layer for the light emitting device. The silicon nitride layer of the light emitting device includes a silicon nitride matrix and silicon nanocrystals formed in the silicon nitride matrix. A light emitting device manufactured by the silicon nitride layer has a good luminous efficiency and emits light in the visible region including the short-wavelength blue/violet region and the near infrared region.
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