4H-SiC MESFETs behavior after high dose irradiation

摘要

This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate.