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Low threshold current density, high power, high efficiency 670 nm GaInP/AlGaInP SQW laser diode

机译：低阈值电流密度，高功率，高效率高效率为670nm增益/ allaInp sqw激光二极管

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Presents a high power (3.6 W from 64 /spl mu/m wide gain guided while 88.0 mW from 2 /spl mu/m wide ridge waveguide devices), high efficiency (95.5%) GaInP/AlGaInP SQW laser diode, which emits at 670 nm and has an ultra low threshold current density (238 A/cm/sup 2/) and very high characteristic temperature (150 K).

机译：呈现高功率（3.6W，从64 / SPL MU / M宽增益引导，而来自2 / SPL MU / M宽脊波导器件的88.0 MW），高效率（95.5％）GAINP / ALGaInP SQW激光二极管，其在670时发出NM并具有超低阈值电流密度（238A / cm / sup 2 /）和非常高的特征温度（150 k）。

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《Asia-Pacific conference on communications 》|1999年||共4页
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Linzhang Wu; Feng Gao; Institute of Electric and Electronic Engineer;
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专利

1. InGaAs/GaAs/GaInP SCH-SQW lasers with low threshold current and high internal quantum efficiency [J] . Zhang G., Nappi J. Electronics Letters . 1992 ,第6期

机译：具有低阈值电流和高内部量子效率的InGaAs / GaAs / GaInP SCH-SQW激光器
2. Low threshold current density operation of GaInP-AlGaInP visible multiple quantum wire-like lasers (MQWR-LDs) under the room temperature pulsed condition [J] . Yoshida J., Kishino K. IEEE Photonics Technology Letters . 1995 ,第3期

机译：GaInP-AlGaInP可见光多量子线状激光器（MQWR-LD）在室温脉冲条件下的低阈值电流密度操作
3. 650 nm GaInP/AlGaInP laser diodes with low threshold and compressively strained MQW active layer [J] . XIA Wei, LI Shu-qiang, VANG Ling, Optoelectronics letters . 2006 ,第4期

机译：具有低阈值和压缩应变的MQW有源层的650 nm GaInP / AlGaInP激光二极管
4. Low threshold current density, high power, high efficiency 670 nm GaInP/AlGaInP SQW laser diode [C] . Linzhang Wu, Feng Gao . 1999

机译：低阈值电流密度，高功率，高效率670 nm GaInP / AlGaInP SQW激光二极管
5. ovel InP Based High-Power and High-Efficiency, Single Quantum Well (SQW) Active Region Diode Laser, Emitting at 1.5 microm. [D] . Garrod, Toby J. 2015

机译：ovel基于InP的高功率，高效率，单量子阱（SQW）有源区二极管激光器，发射功率为1.5微米。
6. Ultralong π-phase shift fiber Bragg grating empowered single-longitudinal mode DFB phosphate fiber laser with low-threshold and high-efficiency [O] . Man Jiang, Pu Zhou, Xijia Gu -1

机译：超长π相移光纤布拉格光栅具有低阈值和高效率的单纵模DFB磷酸盐光纤激光器
7. Threshold current temperature dependence of GaInP/(AlyGa1−y)InP 670 nm quantum well lasers [O] . Smowton Peter Michael, Blood Peter 1995

机译：GaInP /（AlyGa1-y）InP 670 nm量子阱激光器的阈值电流温度依赖性
8. High-Power Multiple-Quantum-Well GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.1Micrometers with Low Threshold Current Density. (Reannouncement with New Availability Information) [R] . Choi, H. K., Eglash, S. J. 1992

机译：高功率多量子阱GaInassb / alGaassb二极管激光器在2.1micrometers发射，具有低阈值电流密度。（重新公布新的可用性信息）

Low threshold current density, high power, high efficiency 670 nm GaInP/AlGaInP SQW laser diode

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