Characterisation of Excimer Laser Crystallised Polysilicon by X-Ray Diffraction and by Channeling Contrast in a Scanning Electron Microscope

摘要

Structural characterization of polycrystalline silicon is usually performed by SEM technique on SECCO-etched samples. In this work we analyse, for the first time, Excimer Laser Annealed (ELA)-polysilicon by using channelling contrast effect produced when SEM is operating with low beam energy and high current density. This technique allows grain size study without chemical etching. In addition X-Ray Diffraction (XRD) analysis was performed to determined the crystallographic orientation and size of the crystallites.