Evolution o f the signature of nitrogen related defects in the X-ray absorption spectra of n-rich SiN_2:H films.

摘要

N-rich SiN_2:H films, deposited by plasma enchanced chemical vapor deposition, are studied with X-ray absorption spectroscopy at the N-K-edge. It is demonstrated that in the as-grown films, which contain 22-30 a.t.